jiangsu changjiang electronics technology co., ltd to-2 52-2l plastic-encapsulate diodes mbr d20150ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 150 v v r(rms) rms reverse voltage 105 v i o average rectified output current@ t c =155 20 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 180 a p d power dissipation 1.25 r ja thermal resistance from junction to ambient 80 /w t j junction temperature 125 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage v (br) i r =1ma 150 v reverse current i r v r =150v 100 a v f1 i f =10a 1 v forward voltage v f2 * i f =20a 1.2 v typical total capacitance c tot v r =4 v,f=1mhz pf *pulse test to-252-2l 1. anode 2. cathode 3. a node a,apr,2014 10 0 pf w
0 100 200 300 400 500 600 700 800 900 1000 1 10 100 1000 10000 25 50 75 100 125 150 0.1 1 10 100 1000 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 35 0 100 200 300 400 20000 1 forward characteristics forward voltage v f (mv) forward current i f (ma) t a = 2 5 t a = 1 0 0 reverse characteristics t a = 2 5 t a = 1 0 0 reverse current i r (ua) reverse voltage v r (v) MBRD20150CT typical characteristics power derating curve power dissipation p d (w) ambient temperature t a ( ) t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) a,apr,2014
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